es1a thru es1 m 1 amp super fast recovery silicon rectifier 50 to 10 00 volts do-214ac ( sma j ) ( h ig h p ro fi le ) features for surface mount applications extremely low thermal resistance easy pick and place high temp soldering: 250 c for 10 seconds at terminals superfast recovery times for high efficiency maximum ratings 0.0 7 0 ? 0.0 90 ? 0.0 8 5 ? suggested solder pad layout electrical characteristics @ 25 c unless otherwise specified average forward current i f(av) 1.0a t j = 75 c peak forward surge current i fsm 30a 8.3ms, half sine maximum instantaneous forward voltage v f i fm = 1 .0a; t j = 25 c* maximum dc reverse current at rated dc blocking voltage i r 5 m a 1 00 m a t j = 25 c t j = 1 00 c typical junction capacitance c j 45pf measured at 1.0mhz, v r =4.0v *pulse test: pulse width 200 m sec, duty cycle 2% operating temperature: -5 0 c to +15 0 c storage temperature: -5 0 c to +15 0 c maximum thermal resistance; 15 c/w junction to lead m cc catalog number device marking maximum re current peak reverse voltage maximum rms voltage maximum dc blocking voltage es 1 m e s 1 m 10 00v 70 0v 1000v es 1a e s 1a 50v 35v 50v es 1 b e s 1b 100v 70v 100v es 1c e s 1c 150v 105v 150v es 1d e s 1d 200v 140v 200v es 1g e s 1g 400v 280v 400v es 1j e s 1j 600v 420v 600v es 1 k e s 1 k 8 00v 56 0v 8 00v maximum reverse recovery time t rr i f =0.5a, i r =1.0a, i rr =0.25a www. mccsemi .com dimensions inches mm dim min max min max note a . 0 78 .11 6 1. 98 2.9 5 b .0 67 .08 9 1. 7 0 2.2 5 c .00 2 .008 . 05 .20 d --- .02 --- .51 e .03 5 .0 55 . 89 1. 40 f .065 .0 9 6 1.65 2. 45 g .205 .22 4 5.21 5. 69 h .160 .180 4.06 4.57 j .1 0 0 .1 12 2 . 57 2 . 8 4 h j e f g a b d c cat hode b and e s 1 a - d 5 0 n s e s 1 g - k 60 n s e s 1 m 10 0 ns e s 1 a - d . 97 5 v e s 1 g - k 1. 35 v e s 1 m 1. 6 0 v
om p on ent s 21 20 1 i t a sc a s t ree t ch at s w or th ! " # $
% ! " # mcc
es1a thru es1 m average forward rectified current - amperes versus ambient temperature - c figure 2 forward derating curve 0 15025 50 75 100 0 .2 .4 .6 .8 1.0 1.2 1.4 single phase, half wave 60hz resistive or inductive load amps c 125 1.6 1.8 2.0 2.2 2.4 instantaneous forward current - amperes versus instantaneous forward voltage - volts figure 1 typical forward characteristics 4 6 20 10 amps .2 .4 .6 .8 1.0 1.2 .01 .02 .04 .06 .1 .2 .4 .6 1 2 25 c volts figure 3 junction capacitance .1 .2 1 .4 2 10 20 404 100 200 1 2 6 10 20 100 junction capacitance - pf versus reverse voltage - volts pf volts 60 40 4 400 1000 t j =25 c mcc www. mccsemi .com
es1a thru es1 m figure 5 new sma assembly round lead process t rr +0.5a 0 -0.25 -1.0 1cm set time base for 20/100ns/cm 25vdc 1 w 50 w 10 w oscilloscope note 1 pulse generator note 2 notes: 1. rise time = 7ns max. input impedance = 1 megohm, 22pf 2. rise time = 10ns max. source impedance = 50 ohms 3. resistors are non-inductive figure 6 reverse recovery time characteristic and test circuit diagram 1 100 4 0 5 10 15 8 figure 4 peak forward surge current peak forward surge current - amperes versus number of cycles at 60hz - cycles amps cycles 2 6 10 20 60 80 40 20 25 30 mcc www. mccsemi .com
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